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v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Features
P1dB Output Power: +15.5 dBm Output IP3: +31.5 dBm Gain: 16 dB 50 Ohm I/O's Industry Standard SOT89 Package
8
AMPLIFIERS - SMT
Typical Applications
The HMC311ST89 is an ideal RF/IF gain block or LO buffer amplifier for: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV & Cable Modem * Microwave Radio
Functional Diagram
General Description
The HMC311ST89 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifier. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16.5 dBm output power. The HMC311ST89 offers 16 dB of gain and an output IP3 of +31.5 dBm while requiring only 54 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 22 Ohm, TA = +25 C
Parameter DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 5.0 GHz 5.0 - 6.0 GHz DC - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 4.0 GHz 4.0 - 6.0 GHz 13.5 12.0 10.0 Min. 14.0 13.0 12.5 Typ. 16.0 15.0 14.5 0.004 0.007 0.012 8 7 8 20 15.5 15.0 13.0 31.5 30 27 24 4.5 5 54 0.007 0.012 0.016 Max. Units dB dB dB dB/ C dB/ C dB/ C dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dB mA
Gain
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Broadband Gain & Return Loss
20 15 10 RESPONSE (dB)
Gain vs. Temperature
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 0 1 2
8
AMPLIFIERS - SMT
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0 -5 -10 -15 -20 1 2
GAIN (dB)
5
S21 S11 S22
+25C +85C -40C
3
4
5
6
7
8
9
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 INPUT RETURN LOSS (dB)
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB)
-5
-5
-10
+25C +85C -40C
-10
-15
-15
+25C +85C -40C
-20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
-20 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10 9
+25C +85C -40C
-5 NOISE FIGURE (dB) 8
+25C +85C -40C
8 7 6 5 4 3 2 1
-10
-15
-20
-25 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
18 16 14 P1dB (dBm) 12 10 8 6 4 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
+25C +85C -40C
Psat vs. Temperature
18 16 14 Psat (dBm) 12 10 8 6 4 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
+25C +85C -40C
Power Compression @ 1 GHz
18 Pout (dBm), GAIN (dB), PAE (%) 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0
Pout Gain PAE
Power Compression @ 6 GHz
18 Pout (dBm), GAIN (dB), PAE (%) 16 14 12 10 8 6 4 2 0 -2 4 6 -4 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0
Pout Gain PAE
16
2
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34 32 30 28 OIP3 (dBm) 26 24 22 20 18 16 14 12 10 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
+25C +85C -40C
Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 35 30 25 20 15 10
Icq Gain P1dB Psat OIP3
80 70 60 50 40 30 20 10 4.75 5 Vs (Vdc) 5.25 5.5 Icq (mA)
5 4.5
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +3.9 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 5.21 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +7 Volts +10 dBm 150 C 0.34 W
8
AMPLIFIERS - SMT
NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
191 C/W -65 to +150 C -40 to +85 C
Outline Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v00.0204
MICROWAVE CORPORATION
HMC311ST89
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/DC ground.
Application Circuit
Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias
Recommended Component Values
Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 F 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5200 3.3 nH 100 pF 5800 3.3 nH 100 pF
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0204
HMC311ST89
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 108313*
Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB** Description PC Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum Resistor, 0805 Pkg. Inductor, 0603 Pkg. HMC311ST89 107368 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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